Spesifikasi:
Advantages:
Maximum sample variety due to variable pressure mode, wide range of in situ
experiments.
SEM:
Schottky Emitter
1.7 nm @ 1 kV
1.5 nm @ 1 kV with Tandem decel
1.2 nm @ 1 kV / DCV*
1.9 nm @ 200 V with Tandem decel
0.9 nm @ 15 kV
0.7 nm @ 15 kV / DCV*
0.7 nm @ 30 kV (STEM mode)
2.3 nm @ 1 kV (WD 5 mm)
1.7 nm @ 1 kV with Tandem decel (WD 5 mm)
1.1 nm @ 15 kV (WD 5 mm)
2.3 nm @ 20 kV & 10 nA (WD 5 mm)
Beam current: 5 pA – 100 nA
FIB:
LMIS: Lifetime: 3000 µAh
Resolution: 3 nm @ 30 kV (statistical method)
Resolution: 120 nm @ 1 kV & 10 pA (optional)
Beam current: 1 pA – 100 nA
Detectors: Inlens SE, Inlens EsB, VPSE (Variable pressure secondary electron detector),
SESI (secondary electron secondary ion), aSTEM (scanning transmission electron),
aBSD (backscatter detector)
Chamber Size and Ports: Standard with 18 configurable ports
Stage:
X /Y = 100 mm
Z = 50 mm, Z‘ = 13 mm
T = –4° to 70°, R = 360°
Repeatability: 500 nm in x/y at 0° tilt over full travel range (optional)
Charge Control:
Flood Gun
Local Charge Compensation
Variable Pressure
Store Resolution:512 × 384 to 32 k × 24 k (up to 50 k × 40 k with optional Atlas 5 3D Tomography module)
Analytic Options: EDS, EBSD, WDS, SIMS, others on request